BFG193 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFG193
DESCRIPTION
·Low Noise Figure
NF = 1.3 dB TYP. @V_CE = 8 V, I_C = 10 mA, f = 900 MHz
·High Gain
︱S_21e︱² = 13.5 dB TYP. @V_CE= 8 V,I_C = 30 mA,f = 900 MHz
APPLICATIONS
·Designed for use in low noise ,high-gain amplifiers and
linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
20
V
V_CES Collector-Emitter Voltage
20
V
V_CEO Collector-Emitter Voltage
12
V
V_EBO Emitter-Base Voltage
2
V
I_C
Collector Current-Continuous
80
mA
I_B
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
10
mA
0.6
W
150
℃
-65~150
℃
isc website：www.iscsemi.cn
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