BFD88 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
BFD88
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 8.5A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 400V; VGS= 0
VSD
Diode Forward Voltage
IF= 17A; VGS= 0
MIN MAX UNIT
400
V
2
4
V
0.3
Ω
±100 nA
0.25 mA
1.3
V
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX UNIT
Td(on) Turn-on Delay Time
13
25
ns
Tr
Rise Time
Td(off) Turn-off Delay Time
VDD=0.5VDSS,ID=ID(CON.T)
RG=1.8Ω
24
47
ns
50
75
ns
Tf
Fall Time
20
52
ns
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