BFD88 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
BFD88
DESCRIPTION
·VGS Rated at ±30 V
·High Voltage Power MOSFET
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·designed for general purpose
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
17
A
Ptot
Total Dissipation@TC=25℃
198
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.68 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
30 ℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}