BDY96D Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY96D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 4A; IB= 1.25A
ICBO
Collector Cutoff Current
VCB= 750V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 2A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V, f= 1.0MHz
MIN TYP. MAX UNIT
350
V
1.5
V
3.0
V
1.4
V
1.6
V
1.0 mA
1.0 mA
15
60
10
MHz
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