BDY96D Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY96D
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max.) @ IC= 2.5A
APPLICATIONS
·Designed for use in switching regulators applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
750
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=90℃
TJ
Junction Temperature
15
A
40
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.1 ℃/W
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