BDY82 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDY82
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.05A
VBE(on) Base-Emitter On Voltage
IC= -0.5A; VCE= -5V
ICEO
Collector Cutoff Current
VCE= -20V; IB= 0
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
fT
Current Gain-Bandwidth Product
IC= -0.5A; VCE= -10V
MIN TYP. MAX UNIT
-35
V
-35
V
-10
V
-1.0
V
-0.9
V
-10 mA
-0.2 mA
-0.1 mA
40
240
20
3
MHz
 hFE-1 Classifications
A
B
C
40-80 70-140 120-240
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