BDY82 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDY82
DESCRIPTION
·Continuous Collector Current-IC= -4A
·Collector Power Dissipation-
: PC= 36W @TC= 25℃
·Complement to Type BDY80
APPLICATIONS
·Designed for general purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-35
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current-Continuous
-4
A
IB
Base Current-Continuous
-2
A
PC
Collector Power Dissipation@TC=25℃
36
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.5 ℃/W
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