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| BDY76 Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY76
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0
V(BR)CER Collector-Emitter Breakdown Voltage IC= 200mA; RBE=100Ω
V(BR)CEX Collector-Emitter Breakdown Voltage IC= 200mA; VBE(off)= 1.5V
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VBE(on) Base-Emitter On Voltage
IC= 10A; VCE= 4V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 50V; IB=B 0
VCE= 100V; VBE(off)= 1.5V
VCE= 30V; VBE(off)= 1.5V,TC=150â
VCB= 100V; IE= 0
VCB= 30V; IE= 0,TC=150â
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 10A; VCE= 4V
fT
Current-GainâBandwidth Product
IC= 1A; VCE= 4V
MIN MAX UNIT
60
V
70
V
80
V
1.4
V
2.2
V
10
mA
5.0
10
mA
5.0
10
mA
5.0 mA
40 120
0.8
MHz
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