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| BDY76 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY76
DESCRIPTION
·Excellent Safe Operating Area
·High DC Current Gain-
: hFE= 40~120@IC = 10A
·Low Saturation Voltage-
: VCE(sat)= 1.4V(Max)@ IC = 10A
APPLICATIONS
·Designed for linear amplifiers, series pass regulators, and
inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEX
Collector-Emitter Voltage
80
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
30
A
IBB
Base Current-Continuous
5
A
PC
Collector Power Dissipation @TC=25â 150
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 â/W
isc Websiteï¼www.iscsemi.cn
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