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| BDY74 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY74
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0; L= 25mH
VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; VBE= -1.5V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 4V
ICBO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= 130V; IE= 0
VCE= 130V; VBE(off)= 1.5V
VCE= 130V; VBE(off)= 1.5V, TC= 150â
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 3A; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 1A; VCE= 10V
MIN MAX UNIT
120
V
150
V
1.0
V
1.7
V
1.0 mA
1.0
10
mA
5.0 mA
50 150
0.8
MHz
isc Websiteï¼www.iscsemi.cn
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