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| BDY74 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY74
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC = 3A
APPLICATIONS
·Designed for use in industrial and commercial equipment
including high fidelity audio amplifiers, series and shunt
regulators and power switches.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICP
Collector Current-Peak
15
A
IBB
Base Current-Continuous
7
A
PC
Collector Power Dissipation@TC=25â 117
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.5 â/W
isc Websiteï¼www.iscsemi.cn
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