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| BDY72 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY72
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; RBE= 100Ω
VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; VBE= -1.5V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 4V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 140V; IB= 0
VCE= 130V; VBE(off)= 1.5V
VCE= 130V; VBE(off)= 1.5V, TC=150â
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 0.2A; VCE= 10V
MIN MAX UNIT
120
V
130
V
150
V
6.0
V
1.7
V
10
mA
1.0
5.0
mA
1.0
mA
60
180
0.8
MHz
isc Websiteï¼www.iscsemi.cn
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