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| BDY72 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY72
DESCRIPTION
·Contunuous Collector Current-IC= 3A
·Collector Power Dissipation-
: PC= 25W @TC= 25â
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min)
APPLICATIONS
·Designed for use in general purpose switching and linear
amplifier applications requiring high breakdown voltages.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
120
V
VCEX
Collector-Emitter Voltage VBE= -1.5V
150
V
VCER
Collector-Emitter Voltage RBE= 100Ω
130
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
IBB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25â
25
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
7.0 â/W
isc Websiteï¼www.iscsemi.cn
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