BDY71X Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO66

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY71X
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 4V
ICEO
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 30V; IB= 0
VCE= 90V; VBE(off)= 1.5V
VCE= 30V; VBE(off)= 1.5V,TC=150℃
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 0.5A ; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 0.2A; VCE= 10V
MIN MAX UNIT
55
V
7
V
1.0
V
1.7
V
0.5
mA
1.0
5.0
mA
1.0
mA
80
250
0.8
MHz
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