BDY71X Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO66

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY71X
DESCRIPTION
·Continuous Collector Current-IC= 4A
·Collector Power Dissipation-
: PC= 29W @TC= 25℃
APPLICATIONS
·Designed for accordance with the requirements
of BS, CECC and JAN,JANTX, JANTXV and
JANS specifications。
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
90
V
VCEX
Collector-Emitter Voltage VBE= -1.5V
90
V
VCER
Collector-Emitter Voltage RBE= 100Ω
60
V
VCEO
Collector-Emitter Voltage
55
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25℃
29
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
6.0
UNIT
℃/W
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