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| BDY58 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY58
ELECTRICAL CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0
125
V
V(BR)CBO Collector- Base Breakdown Voltage IC= 5mA ; IE= 0
160
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA ; IC= 0
10
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
ICBO
Collector Cutoff Current
ICER
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= 120V; IE= 0
VCE= 80V; RBE= 10Ω
VCE= 80V; RBE= 10Ω; TC=100â
VEB= 10V; IC= 0
1.4
V
0.5 mA
0.5
10
mA
0.5 mA
hFE-1
DC Current Gain
IC= 10A ; VCE= 4V
20
80
hFE-2
DC Current Gain
IC= 20A ; VCE= 4V
15
fT
Current-GainâBandwidth Product IC= 1A ; VCE= 15V; f= 10MHz
10
MHz
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 15A , IBB = 1.5A,
IC= 15A , IB1 = -IB2 = 1.5A,
1.0 μs
2.0 μs
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