BDY58 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY58
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 125V(Min)
·High Power Dissipation
·Low Collector Saturation Voltage
APPLICATIONS
·LF signal power amplification.
·High current fast switching
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector- Base Voltage
160
V
V_CEO
Collector-Emitter Voltage
125
V
V_EBO
Emitter-Base Voltage
10
V
I_C
Collector Current-Continuous
25
A
I_BB
Base Current-Continuous
6
A
P_C
Collector Power Dissipation @T_C=25℃ 175
W
T_J
Junction Temperature
200
℃
T_stg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.0 ℃/W
isc Website：www.iscsemi.cn