BDY55X Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDY55X
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(on) Base-Emitter On Voltage
IC= 4A; VCE= 4V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 30V; IB= 0
VCE= 100V; VBE=-1.5V
VCE= 100V; VBE=-1.5V, TC=150℃
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 4A; VCE= 4V
hFE-2
DC Current Gain
IC= 10A; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 1A; VCE= 4V; f=10MHz
Switching Times
ton
Turn-On Time
IC= 5A; IB= 1A
toff
Turn-Off Time
IC= 5A; IB1= 1A; IB2= -0.5A
MIN MAX UNIT
60
V
1.1
V
2.5
V
1.8
V
0.7 mA
5.0
30
mA
5.0 mA
20 100
10
10
MHz
0.5 μs
2.0 μs
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