BDY55X Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY55X
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-
: hFE=20-100@IC = 4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current
7
A
PC
Collector Power Dissipation@TC=25℃
117
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.5 ℃/W
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