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| BDY53 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTORS DIFFUSED MESA | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDY53
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
60
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB=B 1.4A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 4A; IB=B 0.4A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 7A; IB=B 1.4A
ICEX
Collector Cutoff Current
VCE= 100V;VBE=-1.5V,TC=150â
1.1
V
2.2
V
2.0
V
2.5
V
15
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
3.0 mA
hFE
DC Current Gain
IC= 2A; VCE= 1.5V
20
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 4V; f=10MHz
20
MHz
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 5A; IB=B 1A
IC= 5A; IB1= 1A; IB2= -0.5A
0.3
μs
1.8
μs
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