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| BDY53 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTORS DIFFUSED MESA | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY53
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)=60V(Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
·High Switching Speed
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
12
A
IBB
Base Current
5
A
PC
Collector Power Dissipation@TC=25â
60
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
isc Websiteï¼www.iscsemi.cn
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