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| BDY47 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY47
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 2mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 5A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
hFE-1
DC Current Gain
IC= 15A; IB= 5A
VCB= 750V; IE= 0
VCB= 750V; IE= 0, TC=150â
IC= 2A; VCE= 2V
hFE-2
DC Current Gain
IC= 10A; VCE= 2V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 10V
Switching times
ton
Turn-on Time
tf
Fall Time
toff
Turn-off Time
IC= 5A; IB1= -IB2= 1A
MIN MAX UNIT
350
V
750
V
7
V
1.5
V
2.0
V
0.2
2.5
mA
20
5
10
MHz
0.5 μs
1.0 μs
3.5 μs
isc Websiteï¼www.iscsemi.cn
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