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| BDY47 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY47
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V(Min.)
·DC Current Gain-
: hFE=20(Min.)@IC = 2A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC = 15A
·High Switching Speed
APPLICATIONS
·Voltage regulator
·Inverter
·Switching mode power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
750
V
VCES
Collector-Emitter Voltage
750
V
VCEO Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
17
A
IBB
Base Current
5
A
PC
Collector Power Dissipation@TCâ¤45â
95
W
TJ
Junction Temperature
175
â
Tstg
Storage Temperature
-65~175 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.37 â/W
isc Websiteï¼www.iscsemi.cn
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