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| BDY24 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDY24
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
90
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 3mA; IE= 0
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.25A
ICES
Collector Cutoff Current
VCE= 100V; VBE= 0
0.6
V
1.2
V
1.0 mA
ICEO
Collector Cutoff Current
VCE= 90V; IB=B 0
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
1.0 mA
hFE
DC Current Gain
IC= 2A; VCE= 4V
15
100
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 15V; f=10MHz
10
MHz
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 5A; IB=B 1A
IC= 5A; IB1= 1A; IB2= -0.5A
0.5 μs
2.0 μs
 hFE Classifications
A
B
C
15-45 30-90 75-100
isc Websiteï¼www.iscsemi.cn
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