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| BDY24 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY24
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 90V(Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A
·High Switching Speed
APPLICATIONS
·Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
6
A
IBB
Base Current
3
A
PC
Collector Power Dissipation@TC=25â 87.5
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0 â/W
isc Websiteï¼www.iscsemi.cn
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