 English |
|
|
|
|
|
|
|
| BDX91 Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDX91/93/95
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDX91
BDX93 IC= 30mA ;IB=B 0
BDX95
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.3A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 5A; IB=B 1A
VBE(on)
ICBO
ICEO
Base-Emitter On Voltage
Collector
Cutoff Current
BDX91
BDX93
BDX95
Collector
Cutoff Current
BDX91
BDX93
BDX95
IC= 3A; VCE= 2V
VCB= 60V; IE= 0
VCB= 30V; IE= 0; TC= 150â
VCB= 80V; IE= 0
VCB= 40V; IE= 0; TC= 150â
VCB= 100V; IE= 0
VCB= 50V; IE= 0; TC= 150â
VCE= 60V;IB= 0
VCE= 80V;IB= 0
VCE= 100V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 3A; VCE= 2V
hFE-2
DC Current Gain
IC= 5A; VCE= 2V
fT
Current-GainâBandwidth Product IC= 1A; VCE= 10V
Switching times
ton
Turn-on Time
toff
Turn-off Time
IC= 3A; IB1= -IB2= 0.3A
MIN TYP. MAX UNIT
45
60
V
80
0.8
V
1.0
V
1.5
V
2.0
V
1.4
V
0.1
2.0
0.1 mA
2.0
0.1
2.0
0.2 mA
0.1 mA
20
10
4
MHz
1.0 μs
2.0 μs
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese