BDX91 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector Current -I_C= 10A
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = 60V(Min)- BDX91
80V(Min)- BDX93
100V(Min)- BDX95
·Complement to Type BDX92/94/96
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base
Voltage
BDX91
60
BDX93
80
V
BDX95
100
V_CEO
Collector-Emitter
Voltage
BDX91
60
BDX93
80
V
BDX95
100
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
10
A
15
A
90
W
200
℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.94 ℃/W
isc Website：www.iscsemi.cn
isc Product Specification
BDX91/93/95