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| BDX87 Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX87/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX87
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX87A
BDX87B
IC= 100mA; IB= 0
BDX87C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB=B 24mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 120mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 12A; IB= 120mA
VBE(on)
ICBO
Base-Emitter On Voltage
BDX87
Collector
Cutoff Current
BDX87A
BDX87B
BDX87C
BDX87
IC= 6A; VCE= 3V
VCB= 45V; IE= 0
VCB= 45V; IE= 0; TC= 150â
VCB= 60V; IE= 0
VCB= 60V; IE= 0; TC= 150â
VCB= 80V; IE= 0
VCB= 80V; IE= 0; TC= 150â
VCB= 100V; IE= 0
VCB= 100V; IE= 0; TC= 150â
VCE= 22V; IB=B 0
ICEO
Collector
Cutoff Current
BDX87A VCE= 30V; IB=B 0
BDX87B VCE= 40V; IB=B 0
BDX87C VCE= 50V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 5A; VCE= 3V
hFE-2
DC Current Gain
IC= 6A; VCE= 3V
hFE-3
DC Current Gain
IC= 12A; VCE= 3V
MIN TYP. MAX UNIT
45
60
V
80
100
2.0
V
3.0
V
4.0
V
2.8
V
0.5
5.0
0.5
5.0
mA
0.5
5.0
0.5
5.0
1.0
mA
1000
750
100
2.0
mA
18000
isc Websiteï¼www.iscsemi.cn
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