BDX87 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX87/A/B/C
DESCRIPTION
·High DC Current Gain-
: h_FE= 750(Min)@ I_C= 6A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A
80V(Min)- BDX87B; 100V(Min)- BDX87C
·Complement to Type BDX88/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
BDX87
45
UNIT
BDX87A
60
V_CBO
Collector-Base Voltage
V
BDX87B
80
BDX87C 100
BDX87
45
BDX87A
60
V_CEO
Collector-Emitter Voltage
V
BDX87B
80
BDX87C 100
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
12
A
I_CM
Collector Current-Peak
18
A
I_BB
Base Current
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
200
mA
120
W
200
℃
T_stg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.45 ℃/W
isc Website：www.iscsemi.cn