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| BDX86 Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar PNP Device | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX86/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX86
-45
BDX86A
-60
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
IC= -100mA; IB= 0
V
BDX86B
-80
BDX86C
-100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB=B -16mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB=B -40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -8A; IB=B -80mA
VBE(on)
ICBO
Base-Emitter On Voltage
BDX86
Collector
Cutoff Current
BDX86A
BDX86B
BDX86C
BDX86
IC= -4A; VCE= -3V
VCB= -45V; IE= 0
VCB= -45V; IE= 0; TC= 150â
VCB= -60V; IE= 0
VCB= -60V; IE= 0; TC= 150â
VCB= -80V; IE= 0
VCB= -80V; IE= 0; TC= 150â
VCB= -100V; IE= 0
VCB= -100V; IE= 0; TC= 150â
VCE= -22V; IB=B 0
-2.0
V
-4.0
V
-4.0
V
-2.8
V
-0.5
-5.0
-0.5
-5.0
mA
-0.5
-5.0
-0.5
-5.0
ICEO
Collector
Cutoff Current
BDX86A VCE= -30V; IB=B 0
BDX86B VCE= -40V; IB=B 0
-1.0
mA
BDX86C VCE= -50V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-2.0
mA
hFE-1
DC Current Gain
IC= -3A; VCE= -3V
1000
hFE-2
DC Current Gain
IC= -4A; VCE= -3V
750
18000
hFE-3
DC Current Gain
IC= -8A; VCE= -4V
200
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