BDX86 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar PNP Device

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX86/A/B/C
DESCRIPTION
·High DC Current Gain-
: h_FE= 750(Min)@ I_C= -3A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A
-80V(Min)- BDX86B; -100V(Min)- BDX86C
·Complement to Type BDX85/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
BDX86
-45
UNIT
BDX86A
-60
V_CBO
Collector-Base Voltage
V
BDX86B
-80
BDX86C -100
BDX86
-45
BDX86A
-60
V_CEO
Collector-Emitter Voltage
V
BDX86B
-80
BDX86C -100
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-10
A
I_CM
Collector Current-Peak
-15
A
I_BB
Base Current
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
-100
mA
100
W
200
℃
T_stg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.75 ℃/W
isc Website：www.iscsemi.cn