 English |
|
|
|
|
|
|
|
| BDX85 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX85/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX85
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX85A
BDX85B
IC= 100mA; IB= 0
BDX85C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 16mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB=B 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB=B 80mA
VBE(on)
ICBO
Base-Emitter On Voltage
BDX85
Collector
Cutoff Current
BDX85A
BDX85B
BDX85C
BDX85
IC= 4A; VCE= 3V
VCB= 45V; IE= 0
VCB= 45V; IE= 0; TC= 150â
VCB= 60V; IE= 0
VCB= 60V; IE= 0; TC= 150â
VCB= 80V; IE= 0
VCB= 80V; IE= 0; TC= 150â
VCB= 100V; IE= 0
VCB= 100V; IE= 0; TC= 150â
VCE= 22V; IB=B 0
ICEO
Collector
Cutoff Current
BDX85A VCE= 30V; IB=B 0
BDX85B VCE= 40V; IB=B 0
BDX85C VCE= 50V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 3A; VCE= 3V
hFE-2
DC Current Gain
IC= 4A; VCE= 3V
hFE-3
DC Current Gain
IC= 8A; VCE= 4V
MIN TYP. MAX UNIT
45
60
V
80
100
2.0
V
4.0
V
4.0
V
2.8
V
0.5
5.0
0.5
5.0
mA
0.5
5.0
0.5
5.0
1.0
mA
1000
750
200
2.0
mA
18000
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese