BDX85 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX85/A/B/C
DESCRIPTION
·High DC Current Gain-
: h_FE= 750(Min)@ I_C= 3A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A
80V(Min)- BDX85B; 100V(Min)- BDX85C
·Complement to Type BDX86/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
BDX85
45
UNIT
BDX85A
60
V_CBO
Collector-Base Voltage
V
BDX85B
80
BDX85C 100
BDX85
45
BDX85A
60
V_CEO
Collector-Emitter Voltage
V
BDX85B
80
BDX85C 100
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
10
A
I_CM
Collector Current-Peak
15
A
I_BB
Base Current
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
100
mA
100
W
200
℃
T_stg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.75 ℃/W
isc Website：www.iscsemi.cn