BDX6A Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX66/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX66
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX66A
BDX66B
IC= -50mA ;IB=0
BDX66C
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA
VBE(on) Base-Emitter On Voltage
IC= -10A ; VCE= -3V
VECF
C-E Diode Forward Voltage
IF= -10A
ICEO
Collector Cutoff Current
VCE= ¹/2VCEOmax; IB= 0
BDX66
VCB= -40V;IE= 0;TJ= 150℃
BDX66A VCB= -50V;IE= 0;TJ= 150℃
ICBO
Collector Cutoff Current
BDX66B VCB= -60V;IE= 0;TJ= 150℃
BDX66C VCB= -70V;IE= 0;TJ= 150℃
ICBO
Collector Cutoff Current
VCB= VCBOmax;IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -1A ; VCE= -3V
hFE-2
DC Current Gain
IC= -10A ; VCE= -3V
hFE-3
DC Current Gain
IC= -16A ; VCE= -3V
COB
Output Capacitance
IE= 0 ; VCB= -10V; ftest= 1MHz
Switching times
ton
Turn-on Time
toff
Turn-off Time
IC= -10A; IB1= -IB2= -40mA
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-2
V
-2.5 V
-2
V
-1 mA
-5 mA
-1 mA
-5 mA
2000
1000
1000
300
pF
1
μs
3.5
μs
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