BDX6A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX66/A/B/C
DESCRIPTION
·Collector Current -IC= -16A
·High DC Current Gain-hFE= 1000(Min)@ IC= -10A
·Complement to Type BDX67/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX66
-80
VCBO
Collector-Base
Voltage
BDX66A
-100
V
BDX66B
-120
BDX66C
-140
BDX66
-60
VCEO
Collector-Emitter
Voltage
BDX66A
-80
V
BDX66B
-100
BDX66C
-120
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-16
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-0.25
A
150
W
200
℃
-55~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.17 ℃/W
isc website：www.iscsemi.com
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