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| BDX68 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX68/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX68
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX68A
BDX68B
IC= -100mA; L= 25mH
BDX68C
VCE(sat) Collector-Emitter Saturation Voltage IC= -20A; IB= -80mA
VBE(on)
ICBO
Base-Emitter On Voltage
BDX68
Collector
Cutoff Current
BDX68A
BDX68B
BDX68C
BDX68
IC= -20A; VCE= -3V
VCB= -80V; IE= 0
VCB= -40V; IE= 0; TC=200â
VCB= -100V; IE= 0
VCB= -50V; IE= 0; TC=200â
VCB= -120V; IE= 0
VCB= -60V; IE= 0; TC=200â
VCB= -140V; IE= 0
VCB= -70V; IE= 0; TC=200â
VCE= -30V; IB=B 0
ICEO
Collector
Cutoff Current
BDX68A VCE= -40V; IB=B 0
BDX68B VCE= -50V; IB=B 0
BDX68C VCE= -60V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -5A; VCE= -3V
hFE-2
DC Current Gain
IC= -20A; VCE= -3V
hFE-3
DC Current Gain
IC= -30A; VCE= -3V
COB
Output Capacitance
IE= 0 ; VCB= -10V, ftest= 1.0MHz
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-2.0 V
-2.5 V
-2.0
-10
-2.0
-10
mA
-2.0
-10
-2.0
-10
-6.0 mA
-10 mA
3000
1000
1000
600
pF
isc Websiteï¼www.iscsemi.cn
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