BDX68 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX68/A/B/C
DESCRIPTION
·High DC Current Gain-
: h_FE= 1000(Min)@ I_C= -20A
·Low Saturation Voltage
·Complement to Type BDX69/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX68
-80
BDX68A -100
V_CBO
Collector-Base Voltage
V
BDX68B -120
BDX68C -140
BDX68
-60
BDX68A
-80
V_CEO
Collector-Emitter Voltage
V
BDX68B -100
BDX68C -120
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-25
A
I_CM
Collector Current-Peak
-40
A
I_BB
Base Current
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
-500
mA
150
W
200
℃
T_stg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
0.875 ℃/W
isc Website：www.iscsemi.cn