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| BDX67B Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0;L=25mH
VCEsat
ICBO
ICEO
Collector-emitter saturation voltage IC=10A ;IB=0.04A
Collector cut-off current
VCB=60V; IE=0
TC=150
Collector cut-off current
VCE=50V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
Switching times
ton
Turn-on time
toff
Turn-off time
IC=-10A ;
IB1=-IB2=0.04A
VCC=12V ;
Product Specification
BDX67B
MIN TYP. MAX UNIT
100
V
2
V
1
5
mA
3
mA
3
mA
1.0
s
3.5
s
2
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