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BDX67B Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX67B
DESCRIPTION
With TO-3 package
High current capability
DARLINGTON
APPLICATIONS
Designed for power amplification and
switching application.
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current(peak)
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
120
100
5
16
20
0.25
117
150
-55~200
UNIT
V
V
V
A
A
A
W
MAX
1.17
UNIT
/W