BDX67A Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX67/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX67
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX67A
BDX67B
IC= 50mA ; L= 25mH
BDX67C
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA
VBE(on)
ICBO
ICEO
Base-Emitter On Voltage
BDX67
Collector
Cutoff Current
BDX67A
BDX67B
BDX67C
Collector Cutoff Current
IC= 10A; VCE= 3V
VCB= 80V; IE= 0
VCB= 80V; IE= 0; TC=150℃
VCB= 100V; IE= 0
VCB= 100V; IE= 0; TC=150℃
VCB= 120V; IE= 0
VCB= 120V; IE= 0; TC=150℃
VCB= 140V; IE= 0
VCB= 140V; IE= 0; TC=150℃
VCE= 1/2VCEO(Max); IB=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 3V
hFE-2
DC Current Gain
IC= 10A ; VCE= 3V
hFE-3
DC Current Gain
IC= 16A ; VCE= 3V
VECF
C-E Diode Forward Voltage
IF= 10A
COB
Output Capacitance
IE= 0 ; VCB= 10V,ftest= 1.0MHz
MIN TYP. MAX UNIT
60
80
V
100
120
2.0
V
2.5
V
1.0
5.0
1.0
5.0
mA
1.0
5.0
1.0
5.0
1.0 mA
5.0 mA
5200
1000
4000
2.5
V
300
pF
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