BDX67A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX67/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 1000(Min)@ IC= 10A
·Low Saturation Voltage
·Complement to Type BDX66/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX67
80
BDX67A
100
VCBO
Collector-Base Voltage
V
BDX67B
120
BDX67C
140
BDX67
60
BDX67A
80
VCEO
Collector-Emitter Voltage
V
BDX67B
100
BDX67C
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
16
A
ICM
Collector Current-Peak
20
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
250
mA
150
W
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 ℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}