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| BDX65A Datasheet, PDF (2/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0;L=25mH
VCE(sat) Collector-emitter saturation voltage IC=5A ;IB=20mA
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IC=5A;VCE=3V
VCB=60V; IE=0
TC=150â
VCE=40V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
VF
Diode forward voltage
IF=3A
hFE-1
DC current gain
IC=1A ; VCE=3V
hFE-2
DC current gain
IC=5A ; VCE=3V
hFE-3
DC current gain
IC=10A ; VCE=3V
fT
Transition frequency
IC=5A ; VCE=3V
Product Specification
BDX65A
MIN TYP. MAX UNIT
80
V
2
V
3
V
0.4
3
mA
1
mA
5
mA
1.8
V
1500
1000
1500
7
MHz
2
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