|
BDX65A Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 | |||
|
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX65A
DESCRIPTION
·With TO-3 package
·DARLINGTON
·Complement to type BDX64A
APPLICATIONS
·Designed for power amplification and
switching applications.
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25â)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current(peak)
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25â
VALUE
100
80
5
12
16
0.2
117
-55~200
-55~200
UNIT
V
V
V
A
A
A
W
â
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
1.5
UNIT
â/W
|
▷ |