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| BDX62 Datasheet, PDF (2/2 Pages) Comset Semiconductor – PNP SILICON DARLINGTONS | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX62/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX62
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX62A
BDX62B
IC= -100mA ;IB=0
BDX62C
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB=B -12mA
VBE(on)
ICEO
Base-Emitter On Voltage
Collector Cutoff Current
IC= -3A ; VCE= -3V
VCE= 1/2VCEO; IB= 0
ICBO
Collector Cutoff Current
VCB= VCBOmax;IE= 0
BDX62
VCB= -40V;IE= 0;TJ= 200â
BDX62A VCB= -50V;IE= 0;TJ= 200â
ICBO
Collector Cutoff Current
BDX62B VCB= -60V;IE= 0;TJ= 200â
BDX62C VCB= -70V;IE= 0;TJ= 200â
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -0.5A ; VCE= -3V
hFE-2
DC Current Gain
IC= -3A ; VCE= -3V
hFE-3
DC Current Gain
IC= -8A ; VCE= -3V
COB
Output Capacitance
Switching times
IE= 0 ; VCB= -10V; ftest= 1MHz
ton
Turn-on Time
toff
Turn-off Time
IC= -3A; IB1= -IB2= -12mA
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-2
V
-2.5 V
-0.2 mA
-0.2 mA
-2 mA
-5 mA
1500
1000
750
100
pF
0.5
μs
2.5
μs
isc Websiteï¼www.iscsemi.cn
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