BDX62 Datasheet, PDF (1/2 Pages) Comset Semiconductor – PNP SILICON DARLINGTONS

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX62/A/B/C
DESCRIPTION
·Collector Current -I_C= -8A
·High DC Current Gain-h_FE= 1000(Min)@ I_C= -3A
·Complement to Type BDX63/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX62
-80
V_CBO
Collector-Base
Voltage
BDX62A
-100
V
BDX62B
-120
BDX62C
-140
BDX62
-60
V_CEO
Collector-Emitter
Voltage
BDX62A
-80
V
BDX62B
-100
BDX62C
-120
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-8
A
I_CM
Collector Current-Peak
-12
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-0.15
A
90
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.94 ℃/W
isc Website：www.iscsemi.cn