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| BDX54F Datasheet, PDF (2/2 Pages) STMicroelectronics – SILICON PNP POWER DARLINGTON TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX54F
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB=B 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB=B -10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB=B -10mA
VECF
C-E Diode Forward Voltage
IF= -2A
ICEO
Collector Cutoff Current
VCE= -80V; IB=B 0
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -2A ; VCE= -5V
hFE-2
DC Current Gain
IC= -3A ; VCE= -5V
MIN TYP. MAX UNIT
-160
V
-2.0 V
-2.5 V
-2.5 V
-0.5 mA
-0.2 mA
-5 mA
500
150
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