BDX54F Datasheet, PDF (1/2 Pages) STMicroelectronics – SILICON PNP POWER DARLINGTON TRANSISTOR

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX54F
DESCRIPTION
·Collector Current -I_C= -8A
·High DC Current Gain-
: h_FE= 500(Min)@ I_C= -2A
·Complement to Type BDX53F
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CER
Collector-Emitter Voltage
-160
V
V_CEO
Collector-Emitter Voltage
-160
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-8
A
I_CM
Collector Current-Peak
-12
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-0.2
A
60
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.08 ℃/W
70 ℃/W
isc Website：www.iscsemi.cn