BDX54 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX54
V_CEO(SUS)
Collector-emitter
sustaining voltage
BDX54A
BDX54B
I_C=-0.1A, I_B=0
BDX54C
V_CEsat Collector-emitter saturation voltage I_C=-3A ,I_B=-12mA
V_{BE sat} Base-emitter saturation voltage
I_C=-3A ,I_B=-12mA
BDX54 V_CB=-45V, I_E=0
BDX54A V_CB=-60V, I_E=0
I_CBO
Collector cut-off current
BDX54B V_CB=-80V, I_E=0
BDX54C V_CB=-100V, I_E=0
BDX54 V_CE=-22V, I_B=0
BDX54A V_CE=-30V, I_B=0
I_CEO
Collector cut-off current
BDX54B V_CE=-40V, I_B=0
BDX54C V_CE=-50V, I_B=0
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
h_FE
DC current gain
I_C=-3A ; V_CE=-3V
V_F-1
Forward diode voltage
I_F=-3A
V_F-2
Forward diode voltage
I_F=-8A
Product Specification
BDX54/A/B/C
MIN TYP. MAX UNIT
-45
-60
V
-80
-100
-2.0
V
-2.5
V
-0.2 mA
-0.5 mA
-2
mA
750
-1.8 -2.5
V
-2.5
V
2