BDX54 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX54/A/B/C
DESCRIPTION
With TO-220C package
High DC current gain
DARLINGTON
Complement to type BDX53/A/B/C
APPLICATIONS
Power linear and switching applications
Hammer drivers,audio amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BDX54
V_CBO
Collector-base voltage
BDX54A
Open emitter
BDX54B
BDX54C
BDX54
V_CEO
BDX54A
Collector-emitter voltage
Open base
BDX54B
BDX54C
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current-DC
I_CM
Collector current-Pulse
I_B
Base current
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-45
-60
-80
-100
-45
-60
-80
-100
-5
-8
-12
-0.2
60
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
2.08
UNIT
/W