BDX53 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A.,45-100V,60W)

Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX53
V_CEO(SUS)
Collector-emitter
sustaining voltage
BDX53A
BDX53B
I_C=0.1A, I_B=0
BDX53C
V_CEsat Collector-emitter saturation voltage I_C=3A ,I_B=12mA
V_{BE sat} Base-emitter saturation voltage
I_C=3A ,I_B=12mA
BDX53 V_CB=45V, I_E=0
BDX53A V_CB=60V, I_E=0
I_CBO
Collector cut-off current
BDX53B V_CB=80V, I_E=0
BDX53C V_CB=100V, I_E=0
BDX53 V_CE=22V, I_B=0
BDX53A V_CE=30V, I_B=0
I_CEO
Collector cut-off current
BDX53B V_CE=40V, I_B=0
BDX53C V_CE=50V, I_B=0
I_EBO
Emitter cut-off current
V_EB=5V; I_C=0
h_FE
DC current gain
I_C=3A ; V_CE=3V
V_F-1
Forward diode voltage
I_F=3A
V_F-2
Forward diode voltage
I_F=8A
Product Specification
BDX53/A/B/C
MIN TYP. MAX UNIT
45
60
V
80
100
2.0
V
2.5
V
0.2
mA
0.5
mA
2.0
mA
750
1.8
2.5
V
2.5
V
2